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1 features ? single 2.7v - 3.6v supply dual-interface architecture ? dedicated serial interface (spi modes 0 and 3 compatible) ? dedicated parallel i/o interface (optional use) page program operation ? single cycle reprogram (erase and program) ? 8192 pages (1056 bytes/page) main memory supports page and block erase operations two 1056-byte sram data buffers ? allows receiving of data while reprogramming the flash array continuous read capability through entire array ? ideal for code shadowing applications low-power dissipation ? 4 ma active read current typical ? 2 a cmos standby current typical 20 mhz maximum clock frequency ? serial interface 5 mhz maximum clock frequency ? parallel interface hardware data protection commercial and industrial temperature ranges description the AT45DB642 is a 2.7-volt only, dual-interface flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. the dual-interface of the AT45DB642 allows a dedicated serial interface to be connected to a dsp and a dedicated parallel interface to be connected to a microcontroller or vice versa. 64-megabit 2.7-volt only dual-interface dataflash ? AT45DB642 pin configurations pin name function cs chip select sck/clk serial clock/clock si serial input so serial output i/o7 - i/o0 parallel input/output wp hardware page write protect pin reset chip reset rdy/busy ready/busy ser/par serial/parallel interface control dataflash card (1) note: 1. see at45dcb008 datasheet. 76 54321 tsop top view type 1 note: *optional use ? see pin description text for connection information. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 nc nc rdy/busy reset wp nc nc nc vcc gnd nc nc nc nc cs sck/clk si* so* nc nc nc nc nc nc nc i/o7* i/o6* i/o5* i/o4* vccp* gndp* i/o3* i/o2* i/o1* i/o0* ser/par* nc nc nc nc rev. 1638f ? dflsh ? 09/02
2 AT45DB642 1638f ? dflsh ? 09/02 however, the use of either interface is purely optional. its 69,206,016 bits of memory are orga- nized as 8192 pages of 1056 bytes each. in addition to the main memory, the AT45DB642 also contains two sram data buffers of 1056 bytes each. the buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as reading or writing a con- tinuous data stream. eeprom emulation (bit or byte alterab ility) is easily handled with a self- contained three step read-modify-write operation. unlike conventional flash memories that are accessed randomly with multiple address lines and a parallel interface, the dataflash ? uses either a serial interface or a parallel interface to sequentially access its data. the simple sequential access facilitates hardware layout, increases system reliab ility, minimizes switching noise, and reduces package size and active pin count. dataflash supports spi mode 0 and mode 3. the device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. the device operates at clock frequencies up to 20 mhz with a typical active read current consumption of 4 ma. to allow for simple in-system reprogrammability, the AT45DB642 does not require high input voltages for programming. the device operates from a single power supply, 2.7v to 3.6v, for both the program and read operations. the AT45DB642 is enabled through the chip select pin (cs ) and accessed via a three-wire interface consisting of the serial input (si), serial output (so), and the serial clock (sck), or a parallel interface consisting of the parallel input/output pins (i/o7 - i/o0) and the clock pin (clk). the sck and clk pins are shared and provide the same clocking input to the dataflash. all programming cycles are self-timed, and no separate erase cycle is required before programming. when the device is shipped from atmel, the most significant page of the memory array may not be erased. in other words, the contents of the last page may not be filled with ffh. block diagram memory array to provide optimal flexibility, the memory array of the AT45DB642 is divided into three levels of granularity comprising of sectors, blocks and pages. the ? memory architecture diagram ? illustrates the breakdown of each level and details the number of pages per sector and block. all program operations to the dataflash occur on a page-by-page basis; however, the optional erase operations can be performed at the block or page level. flash memory array page (1056 bytes) buffer 2 (1056 bytes) buffer 1 (1056 bytes) i/o interface sck/clk cs reset vcc gnd rdy/busy ser/par wp so si i/o7 - i/o0
3 AT45DB642 1638f ? dflsh ? 09/02 memory architecture diagram device operation the device operation is controlled by instructions from the host processor. the list of instruc- tions and their associated opcodes are contained in tables 1 through 4. a valid instruction starts with the falling edge of cs followed by the appropriate 8-bit opcode and the desired buffer or main memory address location. while the cs pin is low, toggling the sck/clk pin controls the loading of the opcode and the desired buffer or main memory address location through either the si (serial input) pin or the parallel input pins (i/o7 - i/o0). all instructions, addresses, and data are transferred with the most significant bit (msb) first. buffer addressing is referenced in the datasheet using the terminology bfa10 - bfa0 to denote the 11 address bits required to designate a byte address within a buffer. main memory addressing is referenced using the terminology pa12 - pa0 and ba10 - ba0, where pa12 - pa0 denotes the 13 address bits required to designate a page address and ba10 - ba0 denotes the 11 address bits required to designate a byte address within the page. read commands by specifying the appropriate opcode, data can be read from the main memory or from either one of the two sram data buffers. the dataflash supports two categories of read modes in relation to the sck/clk signal. the differences between the modes are in respect to the inac- tive state of the sck/clk signal as well as which clock cycle data will begin to be output. the two categories, which are comprised of four modes total, are defined as inactive clock polarity low or inactive clock polarity high and spi mode 0 or spi mode 3. a separate opcode (refer to table 1 for a complete list) is used to select which category will be used for reading. please refer to the ? detailed bit-level read timing ? diagrams in this datasheet for details on the clock cycle sequences for each mode. sector 0 = 8 pages 8448 bytes (8k + 256) sector 1 = 248 pages 261,888 bytes (248k + 7936) block = 8448 bytes (8k + 256) 8 pages sector 0 sector 1 page = 1056 bytes (1k + 32) page 0 page 1 page 6 page 7 page 8 page 9 page 8190 page 8191 block 0 page 14 page 15 page 16 page 17 page 18 page 8189 block 1 sector architecture block architecture page architecture block 0 block 1 block 30 block 31 block 32 block 33 block 1022 block 1023 block 62 block 63 block 64 block 65 sector 2 sector 32 = 256 pages 270,336 bytes (256k + 8k) block 2 sector 2 = 256 pages 270,336 bytes (256k + 8k) sector 31 = 256 pages 270,336 bytes (256k + 8k) sector 3 = 256 pages 270,336 bytes (256k + 8k)
4 AT45DB642 1638f ? dflsh ? 09/02 continuous array read: by supplying an initial starting address for the main memory array, the continuous array read command can be utilized to sequentially read a continuous stream of data from the device by simply providing a clock signal; no additional addressing information or control signals need to be provided. the dataflash incorporates an internal address counter that will automatically increment on every clock cycle, allowing one continu- ous read operation without the need of additional address sequences. to perform a continuous read, an opcode of 68h or e8h must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and a series of don ? t care bytes (four don ? t care bytes if using the serial interface or 60 don ? t care bytes if using the parallel interface). the first 13 bits (pa12 - pa0) of the 24-bit (three byte) address sequence specify which page of the main memory array to read, and the last 11 bits (ba10 - ba0) of the 24-bit address sequence specify the starting byte address within the page. the four or 60 don ? t care bytes that follow the three address bytes are needed to initialize the read operation. following the don ? t care bytes, additional clock pulses on the sck/clk pin will result in data being output on either the so (serial output) pin or the parallel output pins (i/o7- i/o0). the cs pin must remain low during the loading of the opcode, the address bytes, the don ? t care bytes, and the reading of data. when the end of a page in main memory is reached dur- ing a continuous array read, the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page). when the last bit (or byte if using the parallel interface mode) in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. as with crossing over page boundaries, no delays will be incurred when wrapping around from the end of the array to the beginning of the array. a low-to-high transition on the cs pin will terminate the read operation and tri-state the output pins (so or i/o7-i/o0). the maximum sck/clk frequency allowable for the continuous array read is defined by the f car specification. the continuous array read bypasses both data buffers and leaves the contents of the buffers unchanged. burst array read with synchronous delay: the burst array read with synchro- nous delay functions very similarly to the continuous array read operation but allows much higher read throughputs by utilizing faster clock frequencies. it incorporates a synchronous delay (through the use of don't care clock cycles) when crossing over page boundaries. to perform a burst array read with synchronous delay, an opcode of 69h or e9h must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and a series of don't care bytes (four don't care bytes if using the serial interface or 60 don't care bytes if using the parallel interface). the first 13 bits (pa12- pa0) of the 24-bit (three byte) address sequence specify which page of the main memory array to read, and the last 11 bits (ba10-ba0) of the 24-bit address sequence specify the start- ing byte address within the page. the don't care bytes that follow the three address bytes are needed to initialize the read operation. following the don't care bytes, additional clock pulses on the sck/clk pin will result in data being output on either the so pin or the i/o7-i/o0 pins.
5 AT45DB642 1638f ? dflsh ? 09/02 as with the continuous array read, the cs pin must remain low during the loading of the opcode, the address bytes, the don't care bytes, and the reading of data. during a burst array read with synchronous delay, when the end of a page in main memory is reached (the last bit or the last byte of the page has been clocked out), the system must send an additional 32 don't care clock cycles before the first bit (or byte if using the parallel interface mode) of the next page can be read out. these 32 don't care clock cycles are necessary to allow the device enough time to cross over the burst read boundary (the crossover from the end of one page to the beginning of the next page). by utilizing the 32 don't care clock cycles, the system does not need to delay the sck/clk signal to the device which allows synchronous operation when reading multiple pages of the memory array. please see the detailed read timing waveforms for illustrations (beginning on page 21) on which clock cycle data will actually begin to be output. when the last bit (or byte in the parallel interface mode) in the main memory array has been read, the device will continue reading back at the beginning of the first page of memory. the transition from the last bit (or byte when using the parallel interface) of the array back to the beginning of the array is also considered a burst read boundary. therefore, the system must send 32 don't care clock cycles before the first bit (or byte if using the parallel interface mode) of the memory array can be read. a low-to-high transition on the cs pin will terminate the read operation and tri-state the output pins (so or i/o7-i/o0). the maximum sck/clk frequency allowable for the burst array read with synchronous delay is defined by the f barsd specification. the burst array read with syn- chronous delay bypasses both data buffers and leaves the contents of the buffers unchanged. main memory page read: a main memory page read allows the user to read data directly from any one of the 8192 pages in the main memory, bypassing both of the data buff- ers and leaving the contents of the buffers unchanged. to start a page read, an opcode of 52h or d2h must be clocked into the device followed by three address bytes (which comprise the 24-bit page and byte address sequence) and a series of don ? t care bytes (four don ? tcarebytes if using the serial interface or 60 don ? t care bytes if the using parallel interface). the first 13 bits (pa12 - pa0) of the 24-bit (three-byte) address sequence specify the page in main mem- ory to be read, and the last 11 bits (ba10 - ba0) of the 24-bit address sequence specify the starting byte address within that page. the four or 60 don ? t care bytes that follow the three address bytes are sent to initialize the read operation. following the don ? tcarebytes,addi- tional pulses on sck/clk result in data being output on either the so (serial output) pin or the parallel output pins (i/o7 - i/o0). the cs pin must remain low during the loading of the opcode, the address bytes, the don ? t care bytes, and the reading of data. when the end of a page in main memory is reached, the device will continue reading back at the beginning of the same page. a low-to-high transition on the cs pin will terminate the read operation and tri- state the output pins (so or i/o7 - i/o0). buffer read: data can be read from either one of the two buffers, using different opcodes to specify which buffer to read from. an opcode of 54h or d4h is used to read data from buffer 1, and an opcode of 56h or d6h is used to read data from buffer 2. to perform a buffer read, the opcode must be clocked into the device followed by three address bytes comprised of 13 don ? t care bits and 11 buffer address bits (bfa10 - bfa0). following the three address bytes, an additional don ? t care byte must be clocked in to initialize the read operation. since the buffer size is 1056 bytes, 11 buffer address bits are required to specify the first byte of data to be read from the buffer. the cs pin must remain low during the loading of the opcode, the address bytes, the don ? t care bytes, and the reading of data. when the end of a buffer is reached, the device will continue reading back at the beginning of the buffer. a low-to-high transition on the cs pin will terminate the read operation and tri-state the output pins (so or i/o7 - i/o0).
6 AT45DB642 1638f ? dflsh ? 09/02 status register read: the status register can be used to determine the device ? s ready/busy status, the result of a main memory page to buffer compare operation, or the device density. to read the status register, an opcode of 57h or d7h must be loaded into the device. after the opcode is clocked in, the 1-byte status register will be clocked out on the out- put pins (so or i/o7 - i/o0), starting with the next clock cycle. when using the serial interface, the data in the status register, starting with the msb (bit 7), will be clocked out on the so pin during the next eight clock cycles. the five most-significant bits of the status register will contain device information, while the remaining three least-significant bits are reserved for future use and will have undefined val- ues. after the one byte of the status register has been clocked out, the sequence will repeat itself (as long as cs remains low and sck/clk is being toggled). the data in the status regis- ter is constantly updated, so each repeating sequence will output new data. ready/busy status is indicated using bit 7 of the status register. if bit 7 is a 1, then the device is not busy and is ready to accept the next command. if bit 7 is a 0, then the device is in a busy state. the user can continuously poll bit 7 of the status register by stopping sck/clk at a low level once bit 7 has been output on the so or i/o7 pin. the status of bit 7 will continue to be output on the so or i/o7 pin, and once the device is no longer busy, the state of the so or i/o7 pin will change from 0 to 1. there are eight operations that can cause the device to be in a busy state: main memory page to buffer transfer, main memory page to buffer compare, buffer to main memory page program with built-in erase, buffer to main memory page pro- gram without built-in erase, page erase, block erase, main memory page program, and auto page rewrite. the result of the most recent main memory page to buffer compare operation is indicated using bit 6 of the status register. if bit 6 is a 0, then the data in the main memory page matches the data in the buffer. if bit 6 is a 1, then at least one bit of the data in the main memory page does not match the data in the buffer. the device density is indicated using bits 5, 4, 3 and 2 of the status register. for the AT45DB642, the four bits are logical ? 1 ? s. the decimal value of these four binary bits does not equate to the device density; the four bits represent a combinational code relating to differing densities of dataflash devices, allowing a total of sixteen different density configurations. program and erase commands buffer write: data can be clocked in from the input pins (si or i/o7 - i/o0) into either buffer 1 or buffer 2. to load data into either buffer, a 1-byte opcode, 84h for buffer 1 or 87h for buffer 2, must be clocked into the device, followed by three address bytes comprised of 13 don ? t care bits and 11 buffer address bits (bfa10 - bfa0). the 11 buffer address bits specify the first byte in the buffer to be written. after the last address byte has been clocked into the device, data can then be clocked in on subsequent clock cycles. if the end of the data buffer is reached, the device will wrap around back to the beginning of the buffer. data will continue to be loaded into the buffer until a low-to-high transition is detected on the cs pin. status register format bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 rdy/busy comp1111xx
7 AT45DB642 1638f ? dflsh ? 09/02 buffer to main memory page program with built-in erase: data written into either buffer 1 or buffer 2 can be programmed into the main memory. a 1-byte opcode, 83h for buffer 1 or 86h for buffer 2, must be clocked into the device followed by three address bytes consisting of 13 page address bits (pa12 - pa0) that specify the page in the main memory to be written and 11 don ? t care bits. when a low-to-high transition occurs on the cs pin, the part will first erase the selected page in main memory (the erased state is a logical 1) and then pro- gram the data stored in the buffer into the specified page in main memory. both the erase and the programming of the page are internally self-timed and should take place in a maximum time of t ep . during this time, the status register and the rdy/busy pin will indicate that the part is busy. buffer to main memory page program without built-in erase: a previously- erased page within main memory can be programmed with the contents of either buffer 1 or buffer 2. a 1-byte opcode, 88h for buffer 1 or 89h for buffer 2, must be clocked into the device followed by three address bytes consisting of 13 page address bits (pa12 - pa0) that specify the page in the main memory to be written and 11 don ? t care bits. when a low-to-high transi- tion occurs on the cs pin, the part will program the data stored in the buffer into the specified page in the main memory. it is necessary that the page in main memory that is being pro- grammed has been previously erased using one of the optional erase commands (page erase or block erase). the programming of the page is internally self-timed and should take place in a maximum time of t p . during this time, the status register and the rdy/busy pin will indicate that the part is busy. successive page programming operations, without doing a page erase, are not recom- mended. in other words, changing bytes within a page from a ? 1 ? to a ? 0 ? during multiple page programming operations without erasing that page is not recommended. page erase: the optional page erase command can be used to individually erase any page in the main memory array allowing the buffer to main memory page program without built-in erase command to be utilized at a later time. to perform a page erase, an opcode of 81h must be loaded into the device, followed by three address bytes comprised of 13 page address bits (pa12 - pa0) and 11 don ? t care bits. the 13 page address bits are used to spec- ify which page of the memory array is to be erased. when a low-to-high transition occurs on the cs pin, the part will erase the selected page (the erased state is a logical 1). the erase operation is internally self-timed and should take place in a maximum time of t pe . during this time, the status register and the rdy/busy pin will indicate that the part is busy. block erase: a block of eight pages can be erased at one time allowing the buffer to main memory page program without built-in erase command to be utilized to reduce programming times when writing large amounts of data to the device. to perform a block erase, an opcode of 50h must be loaded into the device, followed by three address bytes comprised of 10 page address bits (pa12 -pa3) and 14 don ? t care bits. the 10 page address bits are used to specify which block of eight pages is to be erased. when a low-to-high transition occurs on the cs pin, the part will erase the selected block of eight pages. the erase operation is internally self- timed and should take place in a maximum time of t be . during this time, the status register and the rdy/busy pin will indicate that the part is busy.
8 AT45DB642 1638f ? dflsh ? 09/02 main memory page program through buffer: this operation is a combination of the buffer write and buffer to main memory page program with built-in erase operations. data is first clocked into buffer 1 or buffer 2 from the input pins (si or i/o7 - i/o0) and then pro- grammed into a specified page in the main memory. a 1-byte opcode, 82h for buffer 1 or 85h for buffer 2, must first be clocked into the device, followed by three address bytes. the address bytes are comprised of 13 page address bits (pa12 - pa0) that select the page in the main memory where data is to be written, and 11 buffer address bits (bfa10 - bfa0) that select the first byte in the buffer to be written. after all address bytes are clocked in, the part will take data from the input pins and store it in the specified data buffer. if the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. when there is a low-to-high transition on the cs pin, the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into that memory page. both the erase and the programming of the page are internally self-timed and should take place in a maxi- mum time of t ep . during this time, the status register and the rdy/busy pin will indicate that the part is busy. additional commands main memory page to buffer transfer: a page of data can be transferred from the main memory to either buffer 1 or buffer 2. to start the operation, a 1-byte opcode, 53h for buffer 1 and 55h for buffer 2, must be clocked into the device, followed by three address bytes comprised of 13 page address bits (pa12 - pa0), which specify the page in main memory that is to be transferred, and 11 don ? tcarebits.thecs pin must be low while toggling the sck/clk pin to load the opcode and the address bytes from the input pins (si or i/o7 - i/o0). the transfer of the page of data from the main memory to the buffer will begin when the cs pin transitions from a low to a high state. during the transfer of a page of data (t xfr ), the status register can be read or the rdy/busy can be monitored to determine whether the transfer has been completed. block erase addressing pa12 pa11 pa10 pa9 pa8 pa7 pa6 pa5 pa4 pa3 pa2 pa1 pa0 block 0 0 0 0000000xxx 0 0 0 0 0000001xxx 1 0 0 0 0000010xxx 2 0 0 0 0000011xxx 3 1 1 1 1111100xxx 1020 1 1 1 1111101xxx 1021 1 1 1 1111110xxx 1022 1 1 1 1111111xxx 1023
9 AT45DB642 1638f ? dflsh ? 09/02 main memory page to buffer compare: a page of data in main memory can be compared to the data in buffer 1 or buffer 2. to initiate the operation, a 1-byte opcode, 60h for buffer 1 and 61h for buffer 2, must be clocked into the device, followed by three address bytes consisting of 13 page address bits (pa12 - pa0) that specify the page in the main memory that is to be compared to the buffer, and 11 don ? tcarebits.thecs pin must be low while toggling the sck/clk pin to load the opcode and the address bytes from the input pins (si or i/o7 - i/o0). on the low-to-high transition of the cs pin, the 1056 bytes in the selected main memory page will be compared with the 1056 bytes in buffer 1 or buffer 2. during this time (t xfr ), the status register and the rdy/busy pin will indicate that the part is busy. on completion of the compare operation, bit 6 of the status register is updated with the result of the compare. auto page rewrite: this mode is only needed if multiple bytes within a page or multiple pages of data are modified in a random fashion. this mode is a combination of two operations: main memory page to buffer transfer and buffer to main memory page program with built-in erase. a page of data is first transferred from the main memory to buffer 1 or buffer 2, and then the same data (from buffer 1 or buffer 2) is programmed back into its original page of main memory. to start the rewrite operation, a 1-byte opcode, 58h for buffer 1 or 59h for buffer 2, must be clocked into the device, followed by three address bytes comprised of 13 page address bits (pa12 - pa0) that specify the page in main memory to be rewritten and 11 don ? t care bits. when a low-to-high transition occurs on the cs pin, the part will first transfer data from the page in main memory to a buffer and then program the data from the buffer back into same page of main memory. the operation is internally self-timed and should take place in a maximum time of t ep . during this time, the status register and the rdy/busy pin will indi- cate that the part is busy. if a sector is programmed or reprogrammed sequentially page by page, then the programming algorithm shown in figure 1 (page 33) is recommended. otherwise, if multiple bytes in a page or several pages are programmed randomly in a sector, then the programming algorithm shown in figure 2 (page 34) is recommended. each page within a sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program opera- tions in that sector. operation mode summary the modes described can be separated into two groups ? modes that make use of the flash memory array (group a) and modes that do not make use of the flash memory array (group b). group a modes consist of: 1. main memory page to buffer 1 (or 2) transfer 2. main memory page to buffer 1 (or 2) compare 3. buffer 1 (or 2) to main memory page program with built-in erase 4. buffer 1 (or 2) to main memory page program without built-in erase 5. page erase 6. block erase 7. main memory page program through buffer 8. auto page rewrite 9. group b modes consist of: 10. buffer 1 (or 2) read 11. buffer 1 (or 2) write 12. status register read if a group a mode is in progress (not fully completed), then another mode in group a should not be started. however, during this time in which a group a mode is in progress, modes in group b can be started.
10 AT45DB642 1638f ? dflsh ? 09/02 this gives the dataflash the ability to virtually accommodate a continuous data stream. while data is being programmed into main memory from buffer 1, data can be loaded into buffer 2 (or vice versa). see application note an-4 ( ? using atmel ? s serial dataflash ? ) for more details. pin descriptions serial/parallel interface control (ser/par ): the dataflash may be configured to utilize either its serial port or parallel port through the use of the serial/parallel control pin (ser/par ). the dual interface offers more flexibility in a system design with both the serial and parallel modes offered on the same device. when the ser/par pin is held high, the serial port (si and so) of the dataflash will be used for all data transfers, and the parallel port (i/o7 - i/o0) will be in a high impedance state. any data presented on the parallel port while ser/par is held high will be ignored. when the ser/par is held low, the parallel port will be used for all data transfers, and the so pin of the serial port will be in a high impedance state. while ser/par is low, any data presented on the si pin will be ignored. switching between the serial port and parallel port can be done at anytime provided the following conditions are met: 1) cs should be held high during the switching between the two modes. 2) t sph (ser/par hold time) and t sps (ser/par setup time) requirements should be followed. having both a serial port and a parallel port on the dataflash allows the device to reside on two buses that can be connected to different processors. the advantage of switching between the serial and parallel port is that while an internally self-timed operation such as an erase or program operation is started with either port, a simultaneous operation such as a buffer read or buffer write can be started utilizing the other port. the ser/par pin is internally pulled high; therefore, if the parallel port is never to be used, then connection of the ser/par pin is not necessary. in addition, if the ser/par pin is not connected or if the ser/par pin is always driven high externally, then the parallel input/output pins (i/o7-i/o0), the vccp pin, and the gndp pin should be treated as ? don ? t connects. ? serial input (si): the si pin is an input-only pin and is used to shift data serially into the device. the si pin is used for all data input, including opcodes and address sequences. if the ser/par pin is always driven low, then the si pin should be a ? don ? t connect ? . serial output (so): the so pin is an output-only pin and is used to shift data serially out from the device. if the ser/par pin is always driven low, then the so pin should be a ? don ? t connect ? . parallel input/output (i/o7-i/o0): the i/o7-i/o0 pins are bidirectional and used to clock data into and out of the device. the i/o7-i/o0 pins are used for all data input, including opcodes and address sequences. the use of these pins is optional, and the pins should be treated as ? don ? t connects ? if the ser/par pin is not connected or if the ser/par pin is always driven high externally. serial clock/clock (sck/clk): the sck/clk pin is an input-only pin and is used to control the flow of data to and from the dataflash. data is always clocked into the device on the rising edge of sck/clk and clocked out of the device on the falling edge of sck/clk. chip select (cs ): the dataflash is selected when the cs pin is low. when the device is not selected, data will not be accepted on the input pins (si or i/o7-i/o0), and the output pins (so or i/o7-i/o0) will remain in a high impedance state. a high-to-low transition on the cs pin is required to start an operation, and a low-to-high transition on the cs pinisrequiredtoend an operation. hardware page write protect: if the wp pin is held low, the first 256 pages (sectors 0 and 1) of the main memory cannot be reprogrammed. the only way to reprogram the first 256 pages is to first drive the protect pin high and then use the program commands previously mentioned. the wp pin is internally pulled high; therefore, in low pin count applications, con- nection of the wp pin is not necessary if this pin and feature will not be utilized. however, it is recommended that the wp pin be driven high externally whenever possible.
11 AT45DB642 1638f ? dflsh ? 09/02 reset : alowstateontheresetpin(reset ) will terminate the operation in progress and reset the internal state machine to an idle state. the device will remain in the reset condition as long as a low level is present on the reset pin. normal operation can resume once the reset pin is brought back to a high level. the device incorporates an internal power-on reset circuit, so there are no restrictions on the reset pin during power-on sequences. the reset pin is also internally pulled high; there- fore, in low pin count applications, connection of the reset pin is not necessary if this pin and feature will not be utilized. however, it is recommended that the reset pinbedrivenhigh externally whenever possible. ready/busy : this open drain output pin will be driven low when the device is busy in an internally self-timed operation. this pin, which is normally in a high state (through an external pull-up resistor), will be pulled low during programming/erase operations, compare operations, and page-to-buffer transfers. the busy status indicates that the flash memory array and one of the buffers cannot be accessed; read and write operations to the other buffer can still be performed. parallel port supply voltage (vccp and gndp): the vccp and gndp pins are used to supply power for the parallel input/output pins (i/o7-i/o0). the vccp and gndp pins need to be used if the parallel port is to be utilized; however, these pins should be treated as ? don ? t connects ? if the ser/par pin is not connected or if the ser/par pin is always driven high externally. power-on/reset state when power is first applied to the device, or when recovering from a reset condition, the device will default to spi mode 3 or inactive clock polarity high. in addition, the output pins (so or i/o7 - i/o0) will be in a high impedance state, and a high-to-low transition on the cs pin will be required to start a valid instruction. the spi mode or the clock polarity mode will be automatically selected on every falling edge of cs by sampling the inactive clock state. system considerations the spi interface is controlled by the serial clock sck, serial input si and chip select cs pins. the sequential 8-bit parallel interface is controlled by the clock clk, 8 i/os and chip select cs pins. these signals must rise and fall monotonically and be free from noise. excessive noise or ringing on these pins can be misinterpreted as multiple edges and cause improper opera- tion of the device. the pc board traces must be kept to a minimum distance or appropriately terminated to ensure proper operation. if necessary, decoupling capacitors can be added on these pins to provide filtering against noise glitches. as system complexity continues to increase, voltage regulation is becoming more important. a key element of any voltage regulation scheme is its current sourcing capability. like all flash memories, the peak current for dataflash occur during the programming and erase operation. the regulator needs to supply this peak current requirement. an under specified regulator can cause current starvation. besides increasing system noise, current starvation during program- ming or erase can lead to improper operation and possible data corruption.
12 AT45DB642 1638f ? dflsh ? 09/02 note: in tables 2 and 3, an sck/clk mode designation of ? any ? denotes any one of the four modes of operation (inactive clock polarity low, inactive clock polarity high, spi mode 0, or spi mode 3). table 1 . read commands command sck/clk mode opcode continuous array read inactive clock polarity low or high 68h spi mode 0 or 3 e8h burst array read with synchronous delay inactive clock polarity low or high 69h spi mode 0 or 3 e9h main memory page read inactive clock polarity low or high 52h spi mode 0 or 3 d2h buffer 1 read inactive clock polarity low or high 54h spi mode 0 or 3 d4h buffer 2 read inactive clock polarity low or high 56h spi mode 0 or 3 d6h status register read inactive clock polarity low or high 57h spi mode 0 or 3 d7h table 2 . program and erase commands command sck/clk mode opcode buffer 1 write any 84h buffer 2 write any 87h buffer 1 to main memory page program with built-in erase any 83h buffer 2 to main memory page program with built-in erase any 86h buffer 1 to main memory page program without built-in erase any 88h buffer 2 to main memory page program without built-in erase any 89h page erase any 81h block erase any 50h main memory page program through buffer 1 any 82h main memory page program through buffer 2 any 85h table 3 . additional commands command sck/clk mode opcode main memory page to buffer 1 transfer any 53h main memory page to buffer 2 transfer any 55h main memory page to buffer 1 compare any 60h main memory page to buffer 2 compare any 61h auto page rewrite through buffer 1 any 58h auto page rewrite through buffer 2 any 59h
13 AT45DB642 1638f ? dflsh ? 09/02 note: p = page address bit b = byte/buffer address bit x=don ? tcare * 4 bytes for serial interface 60 bytes for parallel interface ta ble 4. detailed bit-level addressing sequence opcode opcode address byte address byte address byte additional don?t care bytes required 50h 01010000 pppppppppp xxxxxxxxxxxxxx n/a 52h 01010010 ppppppppppppp bbbbbbbbbbb 4or60 bytes* 53h 01010011 ppppppppppppp xxxxxxxxxxx n/a 54h 01010100 xxxxxxxxxxxxx bbbbbbbbbbb 1byte 55h 01010101 ppppppppppppp xxxxxxxxxxx n/a 56h 01010110 xxxxxxxxxxxxx bbbbbbbbbbb 1byte 57h 01010111 n/a n/a n/a n/a 58h 01011000 ppppppppppppp xxxxxxxxxxx n/a 59h 01011001 ppppppppppppp xxxxxxxxxxx n/a 60h 01100000 ppppppppppppp xxxxxxxxxxx n/a 61h 01100001 ppppppppppppp xxxxxxxxxxx n/a 68h 01101000 ppppppppppppp bbbbbbbbbbb 4or60 bytes* 69h 01101001 ppppppppppppp bbbbbbbbbbb 4or60 bytes* 81h 10000001 ppppppppppppp xxxxxxxxxxx n/a 82h 10000010 ppppppppppppp bbbbbbbbbbb n/a 83h 10000011 ppppppppppppp xxxxxxxxxxx n/a 84h 10000100 xxxxxxxxxxxxx bbbbbbbbbbb n/a 85h 10000101 ppppppppppppp bbbbbbbbbbb n/a 86h 10000110 ppppppppppppp xxxxxxxxxxx n/a 87h 10000111 xxxxxxxxxxxxx bbbbbbbbbbb n/a 88h 10001000 ppppppppppppp xxxxxxxxxxx n/a 89h 10001001 ppppppppppppp xxxxxxxxxxx n/a d2h 11010010 ppppppppppppp bbbbbbbbbbb 4or60 bytes* d4h 11010100 xxxxxxxxxxxxx bbbbbbbbbbb 1byte d6h 11010110 xxxxxxxxxxxxx bbbbbbbbbbb 1byte d7h 11010111 n/a n/a n/a n/a e8h 11101000 ppppppppppppp bbbbbbbbbbb 4or60 bytes* e9h 11101001 ppppppppppppp bbbbbbbbbbb 4or60 bytes* pa12 pa11 pa10 pa9 pa8 pa7 pa6 pa5 pa4 pa3 pa2 pa1 pa0 ba10 ba9 ba8 ba7 ba6 ba5 ba4 ba3 ba2 ba1 ba0
14 AT45DB642 1638f ? dflsh ? 09/02 note: 1. after power is applied and v cc is at the minimum specified datasheet value, the system should wait 20 ms before an opera- tional mode is started. notes: 1. i cc1 during a buffer read is 20 ma maximum. 2. i cc2 during a buffer read is 25 ma maximum. absolute maximum ratings* temperature under bias ................................ -55 cto+125 c *notice: stresses beyond those listed under ? absolute maximum ratings ? may cause permanent dam- age to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. storage temperature ..................................... -65 cto+150 c all input voltages (including nc pins) with respect to ground ...................................-0.6v to +6.25v all output voltages with respect to ground .............................-0.6v to v cc +0.6v dc and ac operating range AT45DB642 operating temperature (case) com. 0 cto70 c ind. -40 cto85 c v cc power supply (1) 2.7v to 3.6v dc characteristics symbol parameter condition min typ max units i sb standby current cs , reset ,wp =v ih ,all inputs at cmos levels 210a i cc1 (1) active current, read operation, serial interface f=20mhz;i out =0ma; v cc =3.6v 410ma i cc2 (2) active current, read operation, parallel interface f=5mhz;i out =0ma; v cc =3.6v 815ma i cc3 active current, program operation, page program v cc =3.6v 20 35 ma i cc4 active current, program operation, fast page program v cc =3.6v 30 50 ma i cc5 active current, erase operation, page v cc =3.6v 20 35 ma i cc6 active current, erase operation, block v cc =3.6v 20 35 ma i li input load current v in =cmoslevels 1 a i lo output leakage current v i/o = cmos levels 1 a v il input low voltage 0.6 v v ih input high voltage 2.0 v v ol output low voltage i ol =1.6ma;v cc =2.7v 0.4 v v oh output high voltage i oh =-100a v cc -0.2v v
15 AT45DB642 1638f ? dflsh ? 09/02 ac characteristics ? serial/parallel interface symbol parameter min max units t sph ser/par hold time 100 ns t sps ser/par setup time 100 ns ac characteristics ? serial interface symbol parameter min max units f sck sck frequency 20 mhz f car sck frequency for continuous array read 15 mhz f barsd sck frequency for burst array read with synchronous delay 20 mhz t wh sck high time 22 ns t wl sck low time 22 ns t cs minimum cs high time 250 ns t css cs setup time 250 ns t csh cs hold time 250 ns t csb cs high to rdy/busy low 150 ns t su data in setup time 5 ns t h data in hold time 10 ns t ho output hold time 0 ns t dis output disable time 18 ns t v output valid 20 ns t xfr page to buffer transfer/compare time 700 s t ep page erase and programming time 20 ms t p page programming time 14 ms t pe page erase time 8ms t be block erase time 12 ms t rst reset pulse width 10 s t rec reset recovery time 1 s
16 AT45DB642 1638f ? dflsh ? 09/02 test waveforms and measurement levels output test load ac characteristics ? parallel interface symbol parameter min max units f sck1 clk frequency 5mhz f car1 clk frequency for continuous array read 3 mhz f barsd1 clk frequency for burst array read with synchronous delay 5 mhz t wh clk high time 80 ns t wl clk low time 80 ns t cs minimum cs high time 250 ns t css cs setup time 250 ns t csh cs hold time 250 ns t csb cs high to rdy/busy low 150 ns t su data in setup time 75 ns t h data in hold time 25 ns t ho output hold time 0 ns t dis output disable time 55 ns t v output valid 70 ns t xfr page to buffer transfer/compare time 700 s t ep page erase and programming time 20 ms t p page programming time 14 ms t pe page erase time 8ms t be block erase time 12 ms t rst reset pulse width 10 s t rec reset recovery time 1 s ac driving levels ac measurement level 0.45v 2.0 0.8 2.4v tr, tf < 3 ns (10% to 90%) device under test 30 pf
17 AT45DB642 1638f ? dflsh ? 09/02 ac waveforms two different timing diagrams are shown below. waveform 1 shows the sck/clk signal being low when cs makes a high-to-low transition, and waveform 2 shows the sck/clk sig- nal being high when cs makes a high-to-low transition. both waveforms show valid timing diagrams. the setup and hold times for the input signals (si or i/o7-i/o0) are referenced to the low-to-high transition on the sck/clk signal. waveform 1 shows timing that is also compatible with spi mode 0, and waveform 2 shows timing that is compatible with spi mode 3. waveform 1 ? inactive clock polarity low and spi mode 0 waveform 2 ? inactive clock polarity high and spi mode 3 cs sck/clk si or i/o7 - i/o0 (input) so or i/o7 - i/o0 (output) tcss valid in th tsu twh twl tcsh tcs tv high impedance valid out tho tdis high impedance cs sck/clk so or i/o7 - i/o0 (output) tcss valid in th tsu twl twh tcsh tcs tv high z valid out tho tdis high impedance si or i/o7 - i/o0 (input)
18 AT45DB642 1638f ? dflsh ? 09/02 reset timing (inactive clock polarity low shown) note: the cs signal should be in the high state before the reset signal is deasserted. serial/parallel interface timing command sequence for read/write operations (except status register read) cs sck/clk reset so or i/o7 - i/o0 (output) high impedance high impedance si or i/o7 - i/o0 (input) trst trec tcss cs ser/par t sph t sps si or i/o7 - i/o0 (input) cmd 8 bits 8 bits 8 bits msb page address (pa12 - pa0) byte/buffer address (ba10 - ba0/bfa10 - bfa0) lsb x x x x x x x x x x x x x x x x x x x x x x x x
19 AT45DB642 1638f ? dflsh ? 09/02 write operations the following block diagram and waveforms illustrate the various write sequences available. main memory page program through buffers buffer write buffer to main memory page program (data from buffer programmed into flash page) flash memory array page (1056 bytes) buffer 2 (1056 bytes) buffer 1 (1056 bytes) i/o interface si buffer 1 to main memory page program main memory page program through buffer 2 buffer 2 to main memory page program main memory page program through buffer 1 buffer 1 write buffer 2 write i/o7 - i/o0 si or i/o7 - i/o0 (input) cmd n n+1 last byte completes writing into selected buffer starts self-timed erase/program operation cs pa12-5 pa4-0, bfa10-8 bfa7-0 si or i/o7 - i/o0 (input) cmd x x x, bfa10-8 bfa7-0 n n+1 last byte completes writing into selected buffer cs si or i/o7 - i/o0 (input) cmd pa12-5 pa4-0, xxx cs starts self-timed erase/program operation x x each transition represents 8 bits n=1stbyteread n+1 = 2nd byte read
20 AT45DB642 1638f ? dflsh ? 09/02 read operations the following block diagram and waveforms illustrate the various read sequences available. main memory page read main memory page to buffer transfer (data from flash page read into buffer) buffer read flash memory array page (1056 bytes) buffer 2 (1056 bytes) buffer 1 (1056 bytes) i/o interface main memory page to buffer 1 main memory page to buffer 2 main memory page read buffer 1 read buffer 2 read so i/o7 - i/o0 si or i/o7 - i/o0 (input) cmd pa12-5 pa4-0, ba10-8 ba7-0 x x cs nn+1 so or i/o7 - i/o0 (output) si or i/o7 - i/o0 (input) cmd pa12-5 pa4-0, xxx x starts reading page data into buffer cs so or i/o7 - i/o0 (output) si or i/o7 - i/o0 (input) cmd x bfa10-8 bfa7-0 cs n n+1 so or i/o7 - i/o0 (output) x each transition represents 8 bits n=1stbyteread n+1 = 2nd byte read
21 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? inactive clock polarity low continuous array read (opcode: 68h) burst array read with synchronous delay (opcode: 69h) si 0 1xx cs so sck 12 63 64 65 66 67 68 high impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 data out bit 0 of page n+1 bit 8447 of page n lsb msb tsu tv si 0 1xx cs so sck 12 63 64 65 66 67 high impedance d 7 d 6 d 1 d 0 d 7 d 6 data out bit 8447 of page n lsb msb tsu tv 32 clocks bit 0 of page n+1 1 2 31 32 33 don't care
22 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? inactive clock polarity low (continued) main memory page read (opcode: 52h) buffer read (opcode: 54h or 56h) status register read (opcode: 57h) si 0 1 0 10 xxx cs so sck 12345 60 61 62 63 64 65 66 67 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv si 0 1 0 10 xxx cs so sck 12345 36 37 38 39 40 41 42 43 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv si 0 1 0 10 111 cs so sck 12345 78910 11 12 16 17 high impedance d 7 d 6 d 5 status register output command opcode msb tsu tv 6 d 1 d 0 d 7 lsb msb
23 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? inactive clock polarity high continuous array read (opcode: 68h) burst array read with synchronous delay (opcode: 69h) si 0 1xxx cs so sck 12 63 64 65 66 67 high impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 bit 0 of page n+1 bit 8447 of page n lsb msb tsu tv data out si 0 1xxx cs so sck high impedance d 7 d 6 data out tsu tv 12 63 64 65 66 1 2 31 32 33 32 clocks d 1 d 0 d 7 d 6 bit 8447 of page n lsb msb bit 0 of page n+1 don't care
24 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? inactive clock polarity high (continued) main memory page read (opcode: 52h) buffer read (opcode: 54h or 56h) status register read (opcode: 57h) si 0 1 0 10 xxx cs so sck 12345 61 62 63 64 65 66 67 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv d 4 68 si 0 1 0 10 xxx cs so sck 12345 37 38 39 40 41 42 43 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv d 4 44 si 0 1 0 10 111 cs so sck 12345 78910 11 12 17 18 high impedance d 7 d 6 d 5 status register output command opcode msb tsu tv 6 d 4 d 0 d 7 lsb msb d 6
25 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? spi mode 0 continuous array read (opcode: e8h) burst array read with synchronous delay (opcode: e9h) si 1 1xxx cs so sck 12 62 63 64 65 66 67 high impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 data out bit 0 of page n+1 bit 8447 of page n lsb msb tsu tv si 0 1xxx cs so sck 12 62 63 64 65 66 high impedance d 7 d 6 data out tsu tv 1 231 32 33 32 clocks d 1 d 0 d 7 d 6 bit 8447 of page n lsb msb bit 0 of page n+1 don't care
26 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? spi mode 0 (continued) main memory page read (opcode: d2h) buffer read (opcode: d4h or d6h) status register read (opcode: d7h) si 1 1 0 10 xxx cs so sck 12345 60 61 62 63 64 65 66 67 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv d 4 si 1 1 0 10 xxx cs so sck 12345 36 37 38 39 40 41 42 43 xx high impedance command opcode tsu d 7 d 6 d 5 data out msb tv d 4 si 1 1 0 10 111 cs so sck 12345 78910 11 12 16 17 high impedance status register output command opcode msb tsu 6 d 1 d 0 d 7 lsb msb d 7 d 6 d 5 tv d 4
27 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? spi mode 3 continuous array read (opcode: e8h) burst array read with synchronous delay (opcode: e9h) si 0 1xxx cs so sck 12 63 64 65 66 67 high impedance d 7 d 6 d 5 d 2 d 1 d 0 d 7 d 6 d 5 bit 0 of page n+1 bit 8447 of page n lsb msb tsu tv data out si 0 1xxx cs so sck high impedance d 7 d 6 data out tsu tv 12 63 64 65 66 1 2 31 32 33 32 clocks d 1 d 0 d 7 d 6 bit 8447 of page n lsb msb bit 0 of page n+1 don't care
28 AT45DB642 1638f ? dflsh ? 09/02 detailed bit-level read timing ? spi mode 3 (continued) main memory page read (opcode: d2h) buffer read (opcode: d4h or d6h) status register read (opcode: d7h) si 0 1 0 10 xxx cs so sck 12345 61 62 63 64 65 66 67 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv d 4 68 si 0 1 0 10 xxx cs so sck 12345 37 38 39 40 41 42 43 xx high impedance d 7 d 6 d 5 data out command opcode msb tsu tv d 4 44 si 0 1 0 10 111 cs so sck 12345 78910 11 12 17 18 high impedance d 7 d 6 d 5 status register output command opcode msb tsu tv 6 d 4 d 0 d 7 lsb msb d 6
29 AT45DB642 1638f ? dflsh ? 09/02 detailed parallel read timing ? spi mode 0 continuous array read (opcode: e8h) burst array read with synchronous delay (opcode: e9h) i/o7-i/o0 (input) cmd addr xxx cs i/o7-i/o0 (output) clk 12 62 63 64 65 66 67 high impedance data data data data data data data data data data out byte 0 of page n+1 byte 1055 of page n tsu tv i/o7-i/o0 (input) cmd addr x x x cs i/o7-i/o0 ( output) clk 12 62 63 64 65 66 high impedance data data data data data data data out byte 1055 of page n tsu tv byte 0 of page n+1 1 231 32 33 32 clocks don't care
30 AT45DB642 1638f ? dflsh ? 09/02 detailed parallel timing ? spi mode 0 (continued) main memory page read (opcode: d2h) buffer read (opcode: d4h or d6h) status register read (opcode: d7h) i/o7-i/o0 (input) cmd addr addr addr x xxx cs i/o7-i/o0 (output) clk 12345 60 61 62 63 64 65 66 67 xx high impedance data data data data out command opcode tsu tv data i/o7-i/o0 (input) cmd addr addr addr x cs i/o7-i/o0 (output) clk 12345 7 high impedance command opcode tsu data out data data data msb tv 6 i/o7-i/o0 (input) cmd cs i/o7-i/o0 (output) clk 1234 high impedance tsu data data data tv status register output
31 AT45DB642 1638f ? dflsh ? 09/02 detailed parallel read timing ? spi mode 3 continuous array read (opcode: e8h) burst array read with synchronous delay (opcode: e9h) i/o7-i/o0 (input) cmd addr xxx cs i/o7-i/o0 (output) clk 12 63 64 65 66 67 high impedance data data data data data data data data data byte 0 of page n+1 byte 1055 of page n tsu tv data out i/o7-i/o0 (input) cmd addr xxx cs i/o7-i/o0 (output) clk high impedance data data data out tsu tv 12 63 64 65 66 1 2 31 32 33 32 clocks data data data data byte 1055 of page n byte 0 of page n+1 don't care
32 AT45DB642 1638f ? dflsh ? 09/02 detailed parallel read timing ? spi mode 3 (continued) main memory page read (opcode: d2h) buffer read (opcode: d4h or d6h) status register read (opcode: d7h) i/07-i/o0 (input) cmd addr addr addr x xxx cs i/07-i/o0 (output) clk 12345 61 62 63 64 65 66 67 xx high impedance data data data data out command opcode tsu tv data 68 i/o7-i/o0 (input) cmd addr addr addr x cs i/o7-i/o0 (output) clk 12345 678 high impedance data data data data out tsu tv data 9 i/o7-i/o0 (input) cmd cs i/o7-i/o0 (output) clk 1 234 high impedance high impedance data data data status register output tsu tv
33 AT45DB642 1638f ? dflsh ? 09/02 figure 1. algorithm for programming or reprogramming of the entire array sequentially notes: 1. this type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page. 2. a page can be written using either a main memory page program operation or a buffer write operation followed by a buffer to main memory page program operation. 3. the algorithm above shows the programming of a single page. the algorithm will be repeated sequentially for each page within the entire array. start main memory page program through buffer (82h, 85h) end provide address and data buffer write (84h, 87h) buffer to main memory page program (83h, 86h)
34 AT45DB642 1638f ? dflsh ? 09/02 figure 2. algorithm for randomly modifying data notes: 1. to preserve data integrity, each page of a dataflash sector must be updated/rewritten at least once within every 10,000 cumulative page erase/program operations. 2. a page address pointer must be maintained to indicate which page is to be rewritten. the auto page rewrite command must use the address specified by the page address pointer. 3. other algorithms can be used to rewrite portions of the flash array. low-power applications may choose to wait until 10,000 cumulative page erase/program operations have accumulated before rewriting all pages of the sector. see application note an-4 ( ? using atmel ? s serial dataflash ? ) for more details. start main memory page to buffer transfer (53h, 55h) increment page address pointer (2) auto page rewrite (2) (58h, 59h) end provide address of page to modify if planning to modify multiple bytes currently stored within a page of the flash array main memory page program through buffer (82h, 85h) buffer write (84h, 87h) buffer to main memory page program (83h, 86h) sector addressing pa1 2 pa11 pa 10 pa9 pa8 pa7 pa6 pa5 pa4 pa3 pa2 - pa0 s ec tor 0000000000x 0 00000xxxxxx 1 00001xxxxxx 2 00010xxxxxx 3 11100xxxxxx 29 11101xxxxxx 30 11110xxxxxx 31 11111xxxxxx 32
35 AT45DB642 1638f ? dflsh ? 09/02 ordering information note: 1. serial interface f sck (mhz) i cc (ma) ordering code package operation range active standby 20 (1) 10 (1) 0.01 AT45DB642-tc 40t commercial (0 cto70 c) 20 (1) 10 (1) 0.01 AT45DB642-ti 40t industrial (-40 cto85 c) package type 40t 40-lead, plastic thin small outline package (tsop)
36 AT45DB642 1638f ? dflsh ? 09/02 packaging information 40t ? tsop 2325 orchard parkway san jose, ca 95131 title drawing no. r rev. 40t , 40-lead (10 x 20 mm package) plastic thin small outline package, type i (tsop) b 40t 10/18/01 pin 1 d1 d pin 1 identifier b e e a a1 a2 0 o ~ 8 o c l gage plane seating plane l1 common dimensions (unit of measure = mm) symbol min nom max note notes: 1. this package conforms to jedec reference mo-142, variation cd. 2. dimensions d1 and e do not include mold protrusion. allowable protrusion on e is 0.15 mm per side and on d1 is 0.25 mm per side. 3. lead coplanarity is 0.10 mm maximum. a ?? 1.20 a1 0.05 ? 0.15 a2 0.95 1.00 1.05 d 19.80 20.00 20.20 d1 18.30 18.40 18.50 note 2 e 9.90 10.00 10.10 note 2 l 0.50 0.60 0.70 l1 0.25 basic b 0.17 0.22 0.27 c 0.10 ? 0.21 e 0.50 basic
printed on recycled paper. ? atmel corporation 2002. atmel corporation makes no warranty for the use of its products, other than those expressly contained in the company ? s standard warranty whichisdetailedinatmel ? s terms and conditions located on the company ? s web site. the company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. no licenses to patents or other intellectual property of atmel are granted by the company in connection with the sale of atmel products, expressly or by implication. atmel ? s products are not authorized for use as critical components in life support devices or systems. atmel headquarters atmel operations corporate headquarters 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 487-2600 europe atmel sarl route des arsenaux 41 case postale 80 ch-1705 fribourg switzerland tel (41) 26-426-5555 fax (41) 26-426-5500 asia room 1219 chinachem golden plaza 77 mody road tsimshatsui east kowloon hong kong tel (852) 2721-9778 fax (852) 2722-1369 japan 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel (81) 3-3523-3551 fax (81) 3-3523-7581 memory 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 436-4314 microcontrollers 2325 orchard parkway san jose, ca 95131 tel 1(408) 441-0311 fax 1(408) 436-4314 la chantrerie bp 70602 44306 nantes cedex 3, france tel (33) 2-40-18-18-18 fax (33) 2-40-18-19-60 asic/assp/smart cards zone industrielle 13106 rousset cedex, france tel (33) 4-42-53-60-00 fax (33) 4-42-53-60-01 1150 east cheyenne mtn. blvd. colorado springs, co 80906 tel 1(719) 576-3300 fax 1(719) 540-1759 scottish enterprise technology park maxwell building east kilbride g75 0qr, scotland tel (44) 1355-803-000 fax (44) 1355-242-743 rf/automotive theresienstrasse 2 postfach 3535 74025 heilbronn, germany tel (49) 71-31-67-0 fax (49) 71-31-67-2340 1150 east cheyenne mtn. blvd. colorado springs, co 80906 tel 1(719) 576-3300 fax 1(719) 540-1759 biometrics/imaging/hi-rel mpu/ high speed converters/rf datacom avenue de rochepleine bp 123 38521 saint-egreve cedex, france tel (33) 4-76-58-30-00 fax (33) 4-76-58-34-80 e-mail literature@atmel.com web site http://www.atmel.com 1638f ? dflsh ? 09/02 /xm atmel ? and dataflash ? are the registered trademarks of atmel. other terms and product names may be the trademarks of others. 1638f ? dflsh ? 09/02 /xm

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